Senior Research Scientist – III-V Epitaxy

SCD · misgav

SCD develops and manufactures advanced infrared detector technologies, combining cutting-edge semiconductor R&D with high-end sensing solutions for defense, aerospace, and commercial applications. Lead R&D activities in III-V semiconductor epitaxy for advanced infrared detector applications. Responsible for developing, optimizing, and characterizing epitaxial structures, investigating material properties, and supporting technology development from research to production. Requirements: • Ph.D. in Materials Science, Physics, Chemistry, Electrical Engineering, or a related field. • Proven experience in III-V semiconductor epitaxy (MBE and/or MOCVD). • Strong background in thin-film characterization using crystallographic, structural, and electrical techniques (e.g., HRXRD, AFM, Hall, C-V, I-V). • Deep understanding of semiconductor materials, crystal growth, defects, and doping control. • Experience in experimental design, data analysis, and problem solving. • Strong scientific writing and presentation skills. • Ability to work independently and lead multidisciplinary R&D activities. • Experience in infrared materials, antimonide-based systems, or optoelectronic devices is a significant advantage.  

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